| PART |
Description |
Maker |
| MC1471 MC1471C MC1741CDR2 MC1741CP1 MC1741CD MC174 |
Internally Compensated, High Performance Operational Amplifier
From old datasheet system
Internally Compensated / High Performance Operational Amplifier
Internally Compensated, High Performance Operational Amplifier
OP-AMP, 1 MHz BAND WIDTH, PDIP8
|
ONSEMI[ON Semiconductor]
|
| LR324P LR324 LR324M |
Internally Frequency Compensated, Large Voltage Gain
|
LRC[Leshan Radio Company]
|
| SA5532NG SE5532AD8G |
Internally Compensated Dual Low Noise Operational Amplifier DUAL OP-AMP, 5000 uV OFFSET-MAX, 10 MHz BAND WIDTH, PDIP8
Internally Compensated Dual Low Noise Operational Amplifier DUAL OP-AMP, 3000 uV OFFSET-MAX, 10 MHz BAND WIDTH, PDSO8
|
ON Semiconductor
|
| MC1456G MC1556U MC1556G MC1456C MC1456 MC1556 MC14 |
INTERNALLY COMPENSATED, HIGH PERFORMANCE OPERATONAL AMPLIFIER
High Performance Operational Amplifier
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
|
| UD36061G-AG6-R |
Internally Compensated
|
Unisonic Technologies
|
| 1N4575 1N4766A 1N4767 1N4768A 1N4576 1N4767A 1N457 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.070 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.014 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.028 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.005 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V.
|
Motorola
|
| CDLL935 CDLL936 CDLL936A CDLL937A CDLL937B CDLL938 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 温补参考稳压二极管
Temperature Compensated Zener Reference Diodes(温度补偿齐纳基准二极 参考温度补偿齐纳二极管（温度补偿齐纳基准二极管
9 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
|
Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
Microsemi, Corp.
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| AN77L00 AN77L00M AN77L03 AN77L035 AN77L035M AN77L0 |
Pressure Transducer, Series 19 mm, Compensated, Pressure Range: 0 psi to 30 psi, Gage, Cell with body o-ring, 10 Vdc excitation 5 V FIXED POSITIVE LDO REGULATOR, 0.3 V DROPOUT, PSSO3
3-pin Low Power Loss Voltage Regulato r(100mA Type)
Pressure Transducer, Series 19 mm, Compensated, Pressure Range: 0 psi to 30 psi, Absolute, 1/8-27 NPT, 10 Vdc excitation
Pressure Transducer, Series 19 mm, Compensated, Pressure Range: 0 psi to 30 psi, Absolute, flush mount with flange, 10 Vdc excitation
Pressure Transducer, Series 19 mm, Compensated, Pressure Range: 0 psi to 30 psi, Absolute, 1/4-18 NPT, 10 Vdc excitation
Series 3-Pin Low Power Loss Voltage Regulator
Pressure Transducer, Series 19 mm, Compensated, Pressure Range: 0 psi to 30 psi, Gage, 1/8-27 NPT, 10 Vdc excitation
Pressure Transducer, Series 19 mm, Compensated, Pressure Range: 0 psi to 30 psi, Gage, 1/4-18 NPT, 10 Vdc excitation
3-pin Low Power Loss Voltage Regulato (100mA Type)
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| MGFC45V5053A C455053A |
5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
5.05-5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MPXM2202 MPXM2202A MPXM2202AS MPXM2202AST1 MPXM220 |
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa片内温度补偿和校准硅压力传感
200 KPA ON CHIP TEMPERATURE COMPENSATED & CALIBRATED SILICON PRESSURE SENSORS
|
Motorola, Inc.
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
